STT-MRAM design technology co-optimization for hardware neural networks. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys Rev Lett, 1988, 61: 2472–2475īinasch G, Grünberg P, Saurenbach F, et al.
Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Commun Mater, 2020, 1: 24īaibich MN, Broto JM, Fert A, et al. Spintronic devices for energy-efficient data storage and energy harvesting. Two-dimensional van der Waals spinterfaces and magnetic-interfaces. Practical strategies for power-efficient computing technologies. These results indicate a promising candidate for use in high-performance spintronic devices.Ĭhang L, Frank DJ, Montoye RK, et al. Importantly, all transistors achieved a widely tunable scale of spin extraction efficiency ranging consistently between 96% and −92% with gate bias. The Ni/2H-VSe 2-based transistor achieved a maximum output spin-polarized current of 3117 mA mm −1 and demonstrated a good switching characteristic of 106 mV dec −1. The proposed TM/2H-VSe 2-based spin-field-effect transistor demonstrated outstanding performance. Nevertheless, all the TM/2H-VSe 2-based dual-probe devices exhibited an interesting bias-dependent spin-injection efficiency with a maximum output spin-polarized current of 666 mA mm −1 in Co/2H-VSe 2. Because the indirect coupling of TM-Se-V led to an obvious reduction of the magnetic moment and the disappearance of the half-metal characteristics of 2H-VSe 2, the expected spin-filtering effect of individual TMs and 2H-VSe 2 deteriorated at the contact region. This study used density functional theory and the quantum transport method to investigate the interfacial coupling and spin transport of transition metals (TMs) with a Fe, Co, and Ni/2H-VSe 2 hybrid nanostructure.
0 kommentar(er)
